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PD - 95144
IRFL4310PBF
HEXFET(R) Power MOSFET
l l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Lead-Free
D
VDSS = 100V RDS(on) = 0.20
G S
ID = 1.6A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
2.2 1.6 1.3 13 2.1 1.0 8.3 20 47 1.6 0.10 5.0 -55 to + 150
Units
A W W
mW/C
V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93 48
Max.
120 60
Units
C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRFL4310PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. Typ. Max. Units Conditions 100 --- --- V VGS = 0V, ID = 250A --- 0.12 --- V/C Reference to 25C, I D = 1mA --- --- 0.20 VGS = 10V, ID = 1.6A 2.0 1.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 4.0 --- --- --- 25 --- 250 --- 100 --- -100 17 25 2.1 3.1 7.8 12 7.8 --- 18 --- 34 --- 20 --- 330 --- 92 --- 54 --- V S A nA nC VDS = VGS, ID = 250A VDS = 50V, ID = 0.80 A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 1.6A VDS = 80V VGS = 10V, See Fig. 6 and 13 VDD = 50V ID = 1.6A RG = 6.2 RD = 31 , See Fig. 10 VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
ns
pF
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 72 210 0.91 A 13 1.3 110 320 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 1.6A, VGS = 0V TJ = 25C, IF = 1.6A di/dt = 100A/s
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) RG = 25, IAS = 3.2A. (See Figure 12)
ISD 1.6A, di/dt 340A/s, VDD V(BR)DSS,
TJ 150C
VDD = 25V, starting TJ = 25C, L = 9.2 mH
Pulse width 300s; duty cycle 2%.
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IRFL4310PBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HE XF E T PRODUCT MARKING
T HIS IS AN IRF L014
INT E RNAT IONAL RE CT IF IE R L OGO
PAR T NUMB E R
L OT CODE AXXXX
F L014 314P
A = AS S E MB L Y S IT E DAT E CODE CODE (YYWW) YY = YE AR WW = WE E K P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL)
T OP
B OT T OM
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IRFL4310PBF
SOT-223 (TO-261AA) Tape & Reel Information
4 .1 0 (.1 6 1) 3 .9 0 (.1 5 4) 1 .8 5 (.07 2 ) 1 .6 5 (.06 5 ) 0 .3 5 (.0 13 ) 0 .2 5 (.0 10 )
TR
2 .0 5 (.08 0) 1 .9 5 (.07 7)
7 .55 (.2 97 ) 7 .45 (.2 94 ) 7 .60 (.2 99 ) 7 .40 (.2 92 ) 1 .60 (.06 2) 1 .50 (.05 9) TYP. F E E D D IR E C T IO N 1 2.1 0 (.47 5 ) 1 1.9 0 (.46 9 ) NO TE S : 1. C O N T R O LL IN G D IM E N S IO N : MIL L IM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -4 81 & E IA -5 41 . 3. E A C H O 330 .0 0 (13 .0 0) R E E L C O N T A IN S 2, 50 0 D E V IC E S . 13 .2 0 (.5 1 9) 12 .8 0 (.5 0 4) 1 5.40 (.60 7) 1 1.90 (.46 9) 4 7 .10 (.2 79 ) 6 .90 (.2 72 )
1 6.30 (.6 4 1) 1 5.70 (.6 1 9)
2.3 0 (.0 9 0) 2.1 0 (.0 8 3)
3 3 0.0 0 (13 .0 00 ) M AX.
5 0.00 (1 .9 6 9) M IN .
N OTES : 1. O U T LIN E C O M F O R M S T O E IA -4 18 -1 . 2. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .. 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
1 8 .4 0 (.72 4) M AX. 14 .4 0 (.56 6 ) 12 .4 0 (.48 8 ) 3 4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04
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